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PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes Rev. 05 -- 20 January 2003 Product data 1. Product profile 1.1 Description Dual, common cathode schottky rectifier diodes in two conventional leaded plastic packages and one surface mount plastic package. Product availability: PBYR2545CT in SOT78 (TO-220AB) PBYR2545CTB in SOT404 (D2-PAK) PBYR2545CTE in SOT226 (I2-PAK). 1.2 Features s Low forward volt drop s Reverse surge capability s Fast switching s High thermal cycling performance 1.3 Applications s Switched mode power supplies s Low loss rectification 1.4 Quick reference data s VRRM 45 V s IF(AV) 30 A s VF 0.62 V s Tj(max) 150 C 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Description anode 1 cathode anode 2 cathode 2 MBL871 Simplified outline [1] mb mb mb Symbol 1 3 2 MBK106 1 3 MBK116 123 123 MBK112 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) SOT226 (I2-PAK) It is not possible to make connection to pin 2 of the SOT404 package. Philips Semiconductors PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM VRWM VR IF(AV) Tstg Tj repetitive peak reverse voltage working peak reverse voltage continuous reverse voltage average rectified forward current storage temperature junction temperature repetitive peak forward current non-repetitive peak forward current square wave; = 0.5; Tmb 126 C tp = 10 ms tp = 8.3 ms; sinusoidal; Tj = 125 C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj(max) Tmb 113 C both diodes conducting; square wave; = 0.5; Tmb 126 C [1] Conditions Min - 65 - Max 45 45 45 30 +175 150 30 180 200 Unit V V V A C C A A A Per diode IFRM IFSM IRRM repetitive peak reverse surge current - 1 A [1] For output currents greater than 20A, the cathode connection should be made to the metal mounting tab. 9397 750 10926 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 05 -- 20 January 2003 2 of 13 Philips Semiconductors PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes 15 PF (W) 10 0.1 Vo = 0.34 V Rs = 0.014 0.5 0.2 003aaa210 127.5 Tmb (C) (max) 135 =1 12 PF (W) 8 Vo = 0.34 V Rs = 0.014 2.2 2.8 4 1.9 003aaa211 132 Tmb (C) (max) 138 a = 1.57 P 5 = tp T 142.5 4 144 tp T 0 0 10 20 IF(AV) (A) t 150 30 0 0 5 10 IF(AV) (A) 15 150 Square current waveform Sinusoidal current waveform I F ( AV ) = I F ( RMS ) x Fig 1. Maximum forward power dissipation (square current waveform) as a function of average forward current (per diode). I F ( RMS a = ------------------) I F ( AV ) Fig 2. Maximum forward power dissipation (sinusoidal current waveform) as a function of average forward current (per diode). 9397 750 10926 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 05 -- 20 January 2003 3 of 13 Philips Semiconductors PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes 4. Thermal characteristics Table 3: Rth(j-mb) Thermal characteristics Conditions per diode; Figure 3 both diodes Rth(j-a) thermal resistance from junction to ambient SOT78 and SOT226 SOT404 vertical in still air minimum footprint; mounted on an FR4 printed-circuit board 60 50 K/W K/W Min Typ Max Unit 1.5 1 K/W K/W thermal resistance from junction to mounting base Symbol Parameter 4.1 Transient thermal impedance 10 Zth(j-mb) (K/W) 003aaa215 1 10-1 10-2 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 3. Transient thermal impedance from junction to mounting base per diode as a function of pulse duration. 9397 750 10926 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 05 -- 20 January 2003 4 of 13 Philips Semiconductors PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes 5. Characteristics Table 4: Characteristics Tj = 25 C unless otherwise specified. Symbol VF Parameter forward voltage Conditions IF = 30 A; Tj = 125 C; Figure 4 IF = 20 A; Tj = 125 C IF = 30 A Min Typ 0.72 0.58 0.72 0.3 30 530 Max 0.76 0.62 0.82 2 40 Unit V V V mA mA pF Static characteristics per diode IR Cd reverse current diode capacitance VR = VRRM; Figure 5 VR = VRRM; Tj = 100 C f = 1 MHz; VR = 5 V; Figure 6 Tj = 25 C to 125 C 9397 750 10926 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 05 -- 20 January 2003 5 of 13 Philips Semiconductors PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes 50 IF (A) 40 003aaa212 Tj = 25 C Tj = 125 C 102 IR (mA) 10 003aaa213 Tj = 125 C 100 C 30 1 typ 20 max 10 10-1 25 C 10-2 0 0.4 0.8 VF (V) 1.2 0 10 20 30 40 50 VR (V) 50 C 75 C 0 Fig 4. Forward current as a function of forward voltage; typical values. Fig 5. Reverse current as a function of reverse voltage per diode; typical values. 104 Cd (pF) 003aaa214 103 102 1 10 VR (V) 102 f = 1MHz Fig 6. Diode capacitance as a function of reverse voltage per diode; typical values. 9397 750 10926 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 05 -- 20 January 2003 6 of 13 Philips Semiconductors PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes 6. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2 Q L b1 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1(1) 3.30 2.79 L2 max. 3.0 p 3.8 3.6 q 3.0 2.7 Q 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB EIAJ SC-46 EUROPEAN PROJECTION ISSUE DATE 00-09-07 01-02-16 Fig 7. SOT78 (TO-220AB). 9397 750 10926 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 05 -- 20 January 2003 7 of 13 Philips Semiconductors PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A E A1 mounting base D1 D HD 2 Lp 1 3 b c Q e e 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20 OUTLINE VERSION SOT404 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-06-25 01-02-12 Fig 8. SOT404 (D2-PAK). 9397 750 10926 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 05 -- 20 January 2003 8 of 13 Philips Semiconductors PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes Plastic single-ended package; low-profile 3 lead TO-220AB SOT226 A D1 E A1 mounting base D L2 b1 L1 Q L 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.40 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 9.65 8.65 D1 1.5 1.1 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 L2 max 3.0 (1) Q 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT226 REFERENCES IEC JEDEC low-profile 3-lead TO-220AB EIAJ EUROPEAN PROJECTION ISSUE DATE 99-05-27 99-09-13 Fig 9. SOT226 (I2-PAK). 9397 750 10926 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 05 -- 20 January 2003 9 of 13 Philips Semiconductors PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes 7. Soldering handbook, full pagewidth 10.85 10.60 10.50 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.35 8.275 1.50 4.60 0.30 4.85 5.40 8.075 7.95 3.00 0.20 solder lands solder resist occupied area solder paste 5.08 1.20 1.30 1.55 MSD057 Dimensions in mm. Fig 10. Reflow soldering footprint for SOT404. 9397 750 10926 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 05 -- 20 January 2003 10 of 13 Philips Semiconductors PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes 8. Revision history Table 5: Rev Date 05 20030120 Revision history CPCN Description Product data (9397 750 10926) supersedes Product specification PBYR2545CT_CTB_SERIES revision 04 of 1998 Oct 01 9397 750 10926 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 05 -- 20 January 2003 11 of 13 Philips Semiconductors PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes 9. Data sheet status Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 11. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. 9397 750 10926 Fax: +31 40 27 24825 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 05 -- 20 January 2003 12 of 13 Philips Semiconductors PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes Contents 1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 (c) Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 20 January 2003 Document order number: 9397 750 10926 |
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